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Datasheet 2SC5356 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SC5356 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5356
2SC5356
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
Unit: mm
• Excellent switching times: tf = 0.5 μs (max) (IC = 1.2 A) • High collectors breakdown voltage: VCEO |
Toshiba Semiconductor |
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1 | 2SC5356 | Silicon NPN Triple Diffused Type SMD Type
Silicon NPN Triple Diffused Type 2SC5356
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A)
+0.2 9.70 -0.2
+0.1 0.80-0.1
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Kexin |
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Número de pieza | Descripción | Fabricantes | |
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