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Datasheet 2SC5353 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC5353 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5353
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage
: VCE(sat) =1V(Max) @ IC= 1.2A
APPLICATIONS ·Designed for use in lighting applications and lo |
 Inchange Semiconductor |
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| 2 | 2SC5353 | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATIONS) 2SC5353
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5353
Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications
Unit: mm
• •
Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltag |
 Toshiba Semiconductor |
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| 1 | 2SC5353 | HIGH VOLTAGE NPN TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SC5353
HIGH VOLTAGE NPN TRANSISTOR
DESCRIPTION
Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications
NPN SILICON TRANSISTOR
1 TO-220
FEATURES
* Excellent switching times: tR = 0.7µs(MAX), tF = 0.5µs (MAX) * High colle |
 Unisonic Technologies |
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