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Datasheet 2SC5227 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 2SC5227 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5227
DESCRIPTION ·High Gain Bandwidth Product
fT = 7 GHz TYP. ·High Gain, Low Noise Figure
︱S21e︱2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz
APPLICATIONS ·Designed for VHF~UHF wideband low noise amplifier
a |
Inchange Semiconductor |
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3 | 2SC5227 | NPN Epitaxial Planar Silicon Transistor Ordering number:EN5034
NPN Epitaxial Planar Silicon Transistor
2SC5227
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Features
· Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.
Package Dimensions
unit:mm 2018B
[2SC |
Sanyo Semicon Device |
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2 | 2SC5227A | RF Transistor Ordering number : ENA1063A
2SC5227A
RF Transistor
10V, 70mA, fT=7GHz, NPN Single CP
http://onsemi.com
Features
• Low-noise
: NF=1.0dB typ (f=1GHz)
• High gain
: ⏐S21e⏐2=12dB typ (f=1GHz)
• High cut-off frequency : fT=7GHz typ
Specifications
Absolute Maximum Ratings at Ta=25°C
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ON Semiconductor |
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1 | 2SC5227A | NPN Epitaxial Planar Silicon Transistor Ordering number : ENA1063A
2SC5227A
SANYO Semiconductors
DATA SHEET
2SC5227A
Features
• • •
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Low-noise : NF=1.0dB typ (f=1GHz) High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : |
Sanyo |
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Número de pieza | Descripción | Fabricantes | |
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