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Datasheet 2SC5227 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 2SC5227   Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5227 DESCRIPTION ·High Gain Bandwidth Product fT = 7 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz APPLICATIONS ·Designed for VHF~UHF wideband low noise amplifier a
Inchange Semiconductor
Inchange Semiconductor
datasheet 2SC5227 pdf
3 2SC5227   NPN Epitaxial Planar Silicon Transistor

Ordering number:EN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimensions unit:mm 2018B [2SC
Sanyo Semicon Device
Sanyo Semicon Device
datasheet 2SC5227 pdf
2 2SC5227A   RF Transistor

Ordering number : ENA1063A 2SC5227A RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP http://onsemi.com Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C
ON Semiconductor
ON Semiconductor
datasheet 2SC5227A pdf
1 2SC5227A   NPN Epitaxial Planar Silicon Transistor

Ordering number : ENA1063A 2SC5227A SANYO Semiconductors DATA SHEET 2SC5227A Features • • • NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications Low-noise : NF=1.0dB typ (f=1GHz) High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency :
Sanyo
Sanyo
datasheet 2SC5227A pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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