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Datasheet 2SC5200 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SC5200 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) 2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteri |
 Toshiba Semiconductor |
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| 8 | 2SC5200 | NPN Epitaxial Silicon Transistor UNISONIC TECHNOLOGIES CO., LTD
2SC5200
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
FEATURES
* Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.
* Complementary to UTC 2SA1943
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
2SC5200- |
 Unisonic |
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| 7 | 2SC5200 | NPN Epitaxial Silicon Transistor 2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A fo |
 Fairchild Semiconductor |
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| 6 | 2SC5200 | SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5200
DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 |
 SavantIC |
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