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Datasheet 2SC5179 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC5179 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz |
 NEC |
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| 2 | 2SC5179-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz |
NEC |
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| 1 | 2SC5179-T2 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz |
NEC |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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