|
|
Datasheet 2SC509 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
16 | 2SC509 | Silicon NPN Transistor http://
http://
http://
http://
|
PCT |
|
15 | 2SC5090 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5090
DESCRIPTION ·High Gain Bandwidth Product
fT = 10 GHz TYP. ·High Gain, Low Noise Figure
︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz
APPLICATIONS ·Designed for VHF~UHF band low noise amplifier appl |
Inchange Semiconductor |
|
14 | 2SC5090 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5090
2SC5090
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Em |
Toshiba Semiconductor |
|
13 | 2SC5091 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5091
2SC5091
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Em |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del 2SC509. Si pulsa el resultado de búsqueda de 2SC509 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |