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Datasheet 2SC4617 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
14 | 2SC4617 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC4617
2SC4617 TRANSISTOR(NPN)
DFEATURES
Power dissipation
TPCM : 0.15 W(Tamb=25℃)
.,LCollector current
ICM : 0.15 A
Collector-base voltage
V(BR)CBO : 60
V
OOperating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
SOT-523
1. BASE 2. EMITTER 3. COLLECT |
WEJ |
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13 | 2SC4617 | NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2SC4617/D
Preliminary Information
NPN Silicon General Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for l |
Motorola Inc |
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12 | 2SC4617 | General Purpose Amplifier Transistors(NPN Silicon)
2SC4617 NPN Silicon General Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT-416 package which is designed for low power surface mount applications, where board space is at a premium |
ON Semiconductor |
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11 | 2SC4617 | General purpose transistor 2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K
General purpose small signal amplifier (50V, 150mA)
Datasheet
Parameter
VCEO IC
Value
50V 150mA
lFeatures 1)Low Cob.Cob=2.0pF(Typ.)
2)Complements the 2SA2029/ 2SA1774EB/2SA1774/2SA1576UB/ 2SA1576A/2SA1037AK.
lApplication GENERA |
ROHM Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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