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Datasheet 2SC4213 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SC4213 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
2SC4213
For Muting and Switching Applications
Unit: mm
• High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = |
Toshiba Semiconductor |
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1 | 2SC4213 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC4213
Features
High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package.
Transistors IC
1 Emitter 2 Base 3 |
Kexin |
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Número de pieza | Descripción | Fabricantes | |
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