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Datasheet 2SC4003 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SC4003 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4003
DESCRIPTION ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High switching applications
ABSOLUTE MA |
 Inchange Semiconductor |
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| 5 | 2SC4003 | NPN Triple Diffused Planar Silicon Transistor Ordering number : ENN2959B
2SC4003
2SC4003
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
• High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-B |
 Sanyo Semicon Device |
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| 4 | 2SC4003 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
2SC4003
TRANSISTOR (NPN)
TO-251
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
1. BASE 2. COLLECTOR 3. EMITTER
Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and sto |
 TRANSYS |
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| 3 | 2SC4003 | NPN Triple Diffused Planar Silicon Transistor
SMD Type
Transistors
NPN Triple Diffused Planar Silicon Transistor 2SC4003
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
High breakdown voltage
+0.2 9.70 -0.2
+0.15 6.50-0.15 +0.2 5.30-0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
Excellent hFE linearity
0. |
 KEXIN |
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