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Datasheet 2SC3739 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC3739 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC3739
2SC3739 TRANSISTOR (NPN)
FEATURES
Power dissipation
DPCM:
0.2 W (Tamb=25℃)
TCollector current
.,LICM: 0.5
Collector-base voltage
A
1. 9
0. 95¡ À0. 025
1. 02
0. 35 2. 92¡ À0. 05
V(BR)CBO:
60 V
Operating and storage junction temperature range
OTJ,Tstg: -55℃ to +150 |
 WEJ |
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| 3 | 2SC3739 | HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
 NEC |
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| 2 | 2SC3739 | NPN Silicon Epitaxia SMD Type
NPN Silicon Epitaxia 2SC3739
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
High gain bandwidth product: fT=200MHz.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum |
 Kexin |
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| 1 | 2SC3739 | NPN Silicon Transistor |
 Renesas |
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