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Datasheet 2SC3518 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | 2SC3518 | Silicon Power Transistors Silicon Power Transistors
2SC3518,3518-Z
NPN
DC/DC
VCEO 60 V IC(pulse) 7.0 A hFE
hFE = 100 MIN. (VCE = 1.0 V, IC = 2.0 A) VCE(sat) 0.3 V (IC = 2.0 A, IB = 0.2 A)
TA = 25°C
VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT(TA = 25°C) PT(TC = 25°C) Tj Tstg
1. PW 10 ms, Duty Cycle 50 2.
60 60 7.0 5.0 7. |
Renesas |
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4 | 2SC3518-Z | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3518-Z
DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This transistor is ideal for audio fr |
Inchange Semiconductor |
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3 | 2SC3518-Z | NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
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2 | 2SC3518-Z | NPN Silicon Epitaxia SMD Type
NPN Silicon Epitaxia 2SC3518-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low VCE(sat).
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
High DC current gain.
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1. |
Kexin |
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Número de pieza | Descripción | Fabricantes | |
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