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Datasheet 2SC3420 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC3420 | NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) 2SC3420
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3420
Strobe Flash Applications Audio Power Amplifier Applications
Unit: mm
• • •
High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = |
 Toshiba Semiconductor |
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| 2 | 2SC3420 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-126C Plastic-Encapsulated Transistors
2SC3420
FEATURES Power dissipation PCM: 1.5 W (Tamb=25℃)
1. EMITTER 2. COLLECTOR 3. BASE
TRANSISTOR (NPN) TO-126C
ataSheet4U.com
Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage jun |
 TRANSYS Electronics |
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| 1 | 2SC3420 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3420
DESCRIPTION ·With TO-126 package ·High DC current gain ·Low saturation voltage ·High collector power dissipation APPLICATIONS ·Storobo flash applications ·Medium power amplifier applicati |
 SavantIC |
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