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Datasheet 2SC3357 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC3357 | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DATA SHEET
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.
4.5±0.1
PACKAGE DIMENSION |
 NEC |
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| 3 | 2SC3357 | NPN Silicon RF Transistor SMD Type
NPN Silicon RF Transistor 2SC3357
IC Transistors
Features
Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
Abso |
 Kexin |
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| 2 | 2SC3357 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3357
DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
APPLICATIONS ·Designed |
 Inchange Semiconductor |
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| 1 | 2SC3357 | NPN EPITAXIAL SILICON RF TRANSISTOR To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this d |
 Renesas |
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