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Datasheet 2SC3326 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC3326 | Silicon NPN transistor 2SC3326
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
高 VEBO，高 hFE。 High emitter-base voltage, High DC current gain.
用途 / Applications
用于开关。 For muting |
 BLUE ROCKET ELECTRONICS |
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| 2 | 2SC3326 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3326
2SC3326
For Muting and Switching Applications
Unit: mm
• High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = |
 Toshiba Semiconductor |
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| 1 | 2SC3326 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC3326
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 (typ.) (IB = 5 mA).
+0.1 1.3-0.1
Features
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