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Datasheet 2SC3265 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 2SC3265 | Silicon NPN Epitaxial Type TRANSISTOR 2SC3265
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications Power Switching Applications
• High DC current gain: hFE (1) = 100 to 320 • Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA) • Complementary to 2SA1 |
Toshiba Semiconductor |
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3 | 2SC3265 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC3265
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+ |
Guangdong Kexin Industrial |
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2 | 2SC3265-O | NPN General Purpose Amplifier MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SC3265-O 2SC3265-Y
Features
• • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering informat |
MCC |
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1 | 2SC3265-Y | NPN General Purpose Amplifier MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SC3265-O 2SC3265-Y
Features
• • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering informat |
MCC |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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