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Datasheet 2SC3072 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SC3072 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3072
Strobe Flash Applications Medium Power Amplifier Applications
2SC3072
Unit: mm
· High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
· Low collector saturation voltage : VCE (sa |
Toshiba Semiconductor |
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1 | 2SC3072 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC3072
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High DC current gain. Low collector saturation voltage.
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
High power dissipation.
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
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Kexin |
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Número de pieza | Descripción | Fabricantes | |
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