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Datasheet 2SC2983 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC2983 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2983
DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS |
 Inchange Semiconductor |
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| 2 | 2SC2983 | Silicon NPN Epitaxial Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications Driver Stage Amplifier Applications
2SC2983
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rat |
 Toshiba Semiconductor |
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| 1 | 2SC2983 | NPN Silicon Epitaxial Transistor SMD Type
NPN Silicon Epitaxial Transistor 2SC2983
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High Transiton Frequency: Ft=100MHz(TYP.)
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.6 |
 Kexin |
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| Número de pieza | Descripción | Fabricantes | |
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