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Datasheet 2SC2911 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SC2911 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2911
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1209
APPLICATIONS ·Designed for high-voltage switching and AF |
 Inchange Semiconductor |
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| 1 | 2SC2911 | 160V/140mA High-Voltage Switching AF 100W Predriver Applications Ordering number:ENN779D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1209/2SC2911
160V/140mA High-Voltage Switching and AF 100W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed.
Package Dimen |
 Sanyo Semicon Device |
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