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Datasheet 2SC2873 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SC2873 | TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS) 2SC2873
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications Power Switching Applications
• • • • • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 μs (typ.) Small flat package PC = 1.0 to 2.0 W |
 Toshiba Semiconductor |
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| 5 | 2SC2873 | Silicon PNP Epitaxial Type SMD Type
Silicon PNP Epitaxial Type 2SC2873
Transistors
Features
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 Small flat package. PC = 1.0 to 2.0 W s (typ.).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter vo |
 Kexin |
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| 4 | 2SC2873 | NPN Silicon Epitaxial Planar Transistor 2SC2873
NPN Silicon
Elektronische Bauelemente
RoHS Compliant Product
Epitaxial Planar Transistor
SOT-89
FEATURES z Low saturation voltage z High speed switching time z Complementary to 2SA1213 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector |
 SeCoS |
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| 3 | 2SC2873 | TRANSISTOR 2SC2873
TRANSISTOR (NPN)
FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching
SOT- 89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise no |
 Jin Yu Semiconductor |
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