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Datasheet 2SC2782 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC2782 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec |
 Toshiba Semiconductor |
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| 3 | 2SC2782 | NPN SILICON RF POWER TRANSISTOR 2SC2782
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band.
PACKAGE STYLE .500 6L FLG
C A
3
D
1
2x Ø N FULL R
FEATURES:
• 175 MHz 12.5 V • PG = 6.4 dB at 80 W/175 |
 ASI |
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| 2 | 2SC2782 | Silicon NPN POWER TRANSISTOR HG Semiconductors
2sc2782HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Vol |
 HGSemi |
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| 1 | 2SC2782A | VHF BAND POWER AMPLIFIER APPLICATIONS 2SC2782A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782A
Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
VHF BAND POWER AMPLIFIER APPLICATIONS
z Output Power
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Em |
Toshiba Semiconductor |
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