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Datasheet 2SC2715 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2SC2715 | Silicon NPN transistor 2SC2715
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
功率增益高，用于调频中频，振荡级和调幅转换中频级。 High power gain, recommended for FM IF,OSC st |
 BLUE ROCKET ELECTRONICS |
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| 7 | 2SC2715 | Silicon NPN Epitaxial Planar Type Transistor 2SC2715
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2715
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector |
 Toshiba Semiconductor |
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| 6 | 2SC2715 | Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.
Production specification
2SC2715
Pb
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No. 2SC2715 Marking RR1/RO1/RY1 Package Code SOT-23
MAXI |
 Galaxy Semi-Conductor |
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| 5 | 2SC2715 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC2715
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz). Recommended for FM IF, OSC stage and AM CONV. IF stage.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1- |
 Kexin |
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