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Datasheet 2SB955 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SB955 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB955
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= |
 Inchange Semiconductor |
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| 2 | 2SB955 | Silicon PNP Triple Diffused 2SB955(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1126(K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3
1
2 3
2SB955(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector t |
 Hitachi Semiconductor |
|
| 1 | 2SB955K | Silicon PNP Triple Diffused 2SB955(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1126(K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3
1
2 3
2SB955(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector t |
Hitachi Semiconductor |
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