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Datasheet 2SB649 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | 2SB649 | Silicon PNP Epitaxial 2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage E |
 Hitachi Semiconductor |
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| 13 | 2SB649 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB649/A
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB669/A
PNP SILICON TRANSISTOR
1
SOT-89
1
TO-126
1
TO-126C
1
TO-92
*Pb-free plating product number: 2SB649L/2SB649A |
 Unisonic Technologies |
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| 12 | 2SB649 | PNP Epitaxial Planar Transistors 2SB649/2SB649A
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
TO-126C
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage Tempera |
 Weitron Technology |
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| 11 | 2SB649 | TO-126C Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-126C Plastic-Encapsulated Transistors
2SB649/2SB649A
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
1. EMITTER 2. COLLECTOR 3. BASE
TRANSISTOR (PNP) TO-126C
Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction |
 TRANSYS Electronics |
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