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Datasheet 2SB1412 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SB1412 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1412
DESCRIPTION ·Small and slim package making it easy to make 2SB1205-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
perfor |
 Inchange Semiconductor |
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| 6 | 2SB1412 | Low Frequency Transistor Low frequency transistor (−20V,−5A)
2SB1412
zFeatures 1) Low VCE(sat).
VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118.
zStructure Epitaxial planar type PNP silicon transistor
zDimensions (Unit : mm)
2SB1412
ROHM : |
 ROHM Semiconductor |
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| 5 | 2SB1412 | PNP EPITAXIAL PLANAR TRANSISTOR 2SB1412
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 2 3
Features:
* Excellent DC Current Gain Characteristics * Low VCE(Sat)
1
D-PAK(TO-252)
Mechanical Data:
* Case : Molded Plastic * Weight : 0.925 grams
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to |
 Weitron Technology |
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| 4 | 2SB1412 | HIGH VOLTAGE SWITCHING TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
DESCRIPTION
The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.
1
FEATURES
*Excellent DC current gain characteristics *Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)
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 Unisonic Technologies |
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