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Datasheet 2SB1308 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | 2SB1308 | Power Transistor (-50V/ -3A) Transistors
2SB1308 2SD1963
(94S-166-B204)
(94S-342-D204)
290
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The s |
ROHM Semiconductor |
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6 | 2SB1308 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1308
FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
TRANSISTOR (PNP)
SOT-89
1. BASE
0.5 -3 -30
W (Tamb=25℃) A V
2. COLLECTOR 1 3. EMITTER 2 3
Operating and storage junction |
TRANSYS |
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5 | 2SB1308 | Power Transistor SMD Type
Power Transistor 2SB1308
Transistors
Features
Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage |
Kexin |
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4 | 2SB1308 | TRANSISTOR 2SB1 308
TRANSISTOR
SOT-89-3L
1. BASE
FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- |
Jin Yu Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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