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Datasheet 2SB1275 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 2SB1275 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1275
DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=-160V ·Complementary NPN types:2SD1918 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·M |
![]() Inchange Semiconductor |
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2 | 2SB1275 | Power Transistor ( 160V /1.5A) 2SB1275
PNP -1.5A -160V Middle Power Transistor
Parameter
VCEO IC
Value
-160V -1.5A
lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V
4) Lead Free/RoHS Compliant.
lOutline
CPT3
Collector
Base
Emitter
2SB1275 (SC-63) |
![]() ROHM Semiconductor |
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1 | 2SB1275 | Power Transistor SMD Type
Power Transistor 2SB1275
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High breakdown voltage.(BVCEO = -160V)
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
Typ. 30pF at VCB = 10V High transition frequency.(fT = 50MHZ)
+0.1 0.80-0.1
+0.15 0.50 -0. |
![]() Kexin |
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Número de pieza | Descripción | Fabricantes | |
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