Datasheet 2SB1261-K Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SB1261-K	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SB1261-K DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K APPLICATIONS ·Designed for use in audio amplifier and switching, especially	Inchange Semiconductor

2SB126 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SB1260	Power Transistor 2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -	ROHM Semiconductor
2SB1261	PNP Transistor 2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Vol	LGE
2SB1261-Z	PNP SILICON EPITAXIAL TRANSISTOR MP-3	NEC

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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