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Datasheet 2SB1198 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SB1198 | Low-frequency Transistor(-80V/ -0.5A) Transistors
Low-frequency Transistor (*80V, *0.5A)
2SB1198K
FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm)
FAb |
 ROHM Semiconductor |
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| 8 | 2SB1198 | LOW FREQUENCY PNP TRANSISTOR UTC 2SB1198
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
DESCRIPTION
The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor.
2 1
FEATURES
*High breakdown voltage : BVCEO= -80V *Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)
3
SOT-23
1:EMITTER
2:BASE
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 Unisonic Technologies |
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| 7 | 2SB1198K | Silicon PNP transistor 2SB1198K
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
击穿电压高，饱和压降低,与 2SD1782K 互补。 High breakdown, low VCE(sat),complements the 2SD1782K.
用途 |
 BLUE ROCKET ELECTRONICS |
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| 6 | 2SB1198K | PNP Transistor 2SB1198K
SOT-23-3L Transistor(PNP)
1. BASE 2. EMITTER 3. COLLECTOR
Features
Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter C |
 DXC |
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