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Datasheet 2SA821S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SA821S | HIGH VOLTAGE AMPLIFIER TRANSISTOR Transistors
2SA821S 2SC1651S
(94L-183-A35)
(94L-519-C35)
274
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The sp |
 ROHM Semiconductor |
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| 2 | 2SA821S | PNP Transistor RoHS
2SA821S
2SA821S
FEATURES Power dissipation PD: 0.25
TRANSISTOR (PNP)
TO-92S
1. EMITTER 2. COLLECTOR 3. BASE
W (Tamb=25℃)
Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACT |
 WEJ |
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| 1 | 2SA821S | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
2SA821S
TRANSISTOR (PNP)
1. EMITTER
FEATURES z High Breakdown Voltage
2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter |
 JIANGSU CHANGJIANG |
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