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Datasheet 2SA812 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
16 | 2SA812 | PNP General Purpose Transistors PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature
Storage Temperature
Symbol VCBO VCE |
WEITRON |
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15 | 2SA812 | SOT-23 BIPOLAR TRANSISTORS RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25OC)
* Collector current
ICM :
-0.1 A
* Collector-base voltage
V(BR)CBO : -60
V
* Operating and storage junction temperature range
TJ,Tstg: -55O |
Rectron |
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14 | 2SA812 | SILICON PNP TRANSISTOR 2SA812(3CG812)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频放大/Purpose: Audio frequency amplifier application . 特点:与 2SC1623(3DG1623)互补/Features: Complementary pair with 2SC1623(3DG1623).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
数值
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LZG |
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13 | 2SA812 | PNP Plastic-Encapsulate Transistors Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812(PNP)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector |
HOTTECH |
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Número de pieza | Descripción | Fabricantes | |
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