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Datasheet 2SA1941 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SA1941 | PNP Epitaxial Silicon Transistor PNP Silicon PNP Epitaxial Transistor
R
2SA1941
VCEO=-140V (min) 2SC5198
70W
RoHS
APPLICATIONS
Power Amplifier Applications
FEATURES
High collector voltage VCEO=140V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output RoHS product
Package
TO-247
1. |
 JILIN SINO |
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| 5 | 2SA1941 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
• High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198
• Recommended for 70-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25 |
 Toshiba Semiconductor |
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| 4 | 2SA1941 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1941
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage
PINNING PIN |
 SavantIC |
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| 3 | 2SA1941 | POWER TRANSISTOR www.DataSheet4U.net
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1941
DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommen |
 Inchange Semiconductor |
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