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Datasheet 2SA1300 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SA1300 | TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications Medium Power Amplifier Applications
2SA1300
Unit: mm
· High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, I |
 Toshiba Semiconductor |
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| 4 | 2SA1300 | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SA1300
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXAL TYPE DESCRIPTION
*Strobo Flash Applications. *Medium Power Amplifier Applications.
FEATURES
*High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) *Low |
 Unisonic Technologies |
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| 3 | 2SA1300 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA1300
TRANSISTOR (PNP) TO-92
FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ : 150℃ Tstg: -55 |
 TRANSYS |
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| 2 | 2SA1300 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R
2SA1300
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use Strobe flash and medium power amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
.190(4.83) .170(4.33) .190(4.83) .170(4.33)
TO-92
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 Dc Components |
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