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Datasheet 2SA1213 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SA1213 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1213
Power Amplifier Applications Power Switching Applications
2SA1213
Unit: mm
• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package
• PC = 1 |
 Toshiba Semiconductor |
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| 1 | 2SA1213-G | General Purpose Transistor General Purpose Transistor
2SA1213-G Series (PNP)
RoHS Device
Features
-Small flat package. -Power amplifier and switching -applications. -Low saturation voltage. -High speed switching time.
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base voltage
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 Comchip |
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