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Datasheet 2SA1201 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2SA1201 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications Power Amplifier Applications
2SA1201
Unit: mm
• High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package
• PC = 1 to 2 W (mounted on a ceramic subst |
 Toshiba Semiconductor |
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| 7 | 2SA1201 | SILICON PNP EPITAXIAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SA1201
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications.
FEATURES
*High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounte |
 Unisonic Technologies |
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| 6 | 2SA1201 | TRANSISTOR 2SA1 201
TRANSISTOR(PNP)
FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous |
 Jin Yu Semiconductor |
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| 5 | 2SA1201 | PNP Silicon Epitaxial Planar Transistor 2SA1201
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
Epitaxial Planar Transistor
SOT-89
FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter
Collector-Base Volt |
 SeCoS |
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| Número de pieza | Descripción | Fabricantes | |
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