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Datasheet 2SA1173 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SA1173 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-140V(Min) ·Good Linearity of hFE ·Low Saturation Voltage
APPLICATIONS ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCB |
Inchange Semiconductor |
2SA1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SA1943 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
Toshiba Semiconductor |
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2SA1943 | PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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2SA1302 | Silicon PNP Triple Diffused Type Transistor |
Toshiba |
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Número de pieza | Descripción | Fabricantes | |
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