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Datasheet 2PG402 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2PG402 | Insulated Gate Bipolar Transistor IGBTs
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package
unit: mm
6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1
q For flash-light for use in a camera
2.3± 0.1
0.2max. |
Panasonic Semiconductor |
2PG Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2PG009 | Silicon N-Channel Enhancement IGBT |
Panasonic |
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2PG001 | N-channel enhancement mode IGBT |
Panasonic |
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2PG002 | N-Channel Enhancement Mode IGBT |
Panasonic |
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Número de pieza | Descripción | Fabricantes | |
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