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Datasheet 2N930 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
15 2N930   NPN LOW POWER SILICON TRANSISTOR

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices 2N930 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(
Microsemi
Microsemi
datasheet 2N930 pdf
14 2N930   BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS

2N930 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 12.7 (0.500) 5.33 (0.210) min. 4.32 (0.170) BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HER
Seme LAB
Seme LAB
datasheet 2N930 pdf
13 2N930   NPN SILICON TRANSISTORS

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
Central Semiconductor
Central Semiconductor
datasheet 2N930 pdf
12 2N930   AMPLIFIER TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation (a TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Temperature Temperature Range Symbol vCEO vCBO v EBO
Motorola Semiconductors
Motorola Semiconductors
datasheet 2N930 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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