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Datasheet 2N930 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
15 | 2N930 | NPN LOW POWER SILICON TRANSISTOR TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Total Power Dissipation
@ TA = +250C(1) @ TC = +250C( |
Microsemi |
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14 | 2N930 | BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS 2N930
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
12.7 (0.500) 5.33 (0.210)
min.
4.32 (0.170)
BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS
FEATURES
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
• HER |
Seme LAB |
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13 | 2N930 | NPN SILICON TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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Central Semiconductor |
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12 | 2N930 | AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation (a TA = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C Operating and Storage Temperature
Temperature Range
Symbol vCEO vCBO v EBO |
Motorola Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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