Datasheet 2N7002W-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N7002W-G	MOSFET ( Transistor ) MOSFET COMCHIP SMD Diodes Specialist 2N7002W-G (N-Channel) RoHS Device Features -High density cell design for low R DS(ON) . -Voltage control small signal switch. -Rugged and reliable. -High saturation current capability. 0.054(1.35) 0.045(1.15) 0.087(2.20) 0.070(1.80) SOT-323 D Marking: K72 Eq	Comchip Technology

2N7002 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N7002	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel	Pan Jit International Inc.
2N7002	N-channel Trench MOSFET DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciﬁcation N-channel vertical D-MOS transistor FEATURES • Direct interface to C-MOS,	NXP Semiconductors
2N7002	0.20A, 60V, N-Channel MOSFET 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package RDS(on) Id 0.35 A 0.20 A 3 2 1 VDSS 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) TYPICAL RDS(on) = 1.8Ω @10V	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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