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Datasheet 2N7002KW Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N7002KW | N-Channel Enhancement Mode Field Effect Transistor 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface |
 Fairchild Semiconductor |
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| 4 | 2N7002KW | N-Ch Small Signal MOSFET Elektronische Bauelemente
2N7002KW
115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), [email protected], IDS@200mA=4 Advanced Trench Process Techn |
 SeCoS |
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| 3 | 2N7002KW | 60V N-Channel Enhancement Mode MOSFET 2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω
• Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially |
 Pan Jit International |
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| 2 | 2N7002KW | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002KW
V(BR)DSS
9
N-Channel MOSFET RDS(on)MAX
ȍ#9
ȍ#9
ID
P$
SOT-323
3
1. GATE
2. SOURCE
1
3. DRAIN
2
FEATURE z High density cell design for Low RDS(on) z Voltage controlled small sig |
 JCET |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
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