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Datasheet 2N7002B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2N7002B | N-Channel Enhancement Mode MOSFET 2N7002B
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
ESD rating: 2000V (HBM)
Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device
Applications
High speed line drive |
 KODENSHI KOREA |
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| 6 | 2N7002BK | N-channel Trench MOSFET 2N7002BK
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 17 June 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 |
 NXP Semiconductors |
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| 5 | 2N7002BKMB | single N-channel Trench MOSFET 2N7002BKMB
83B
60 V, single N-channel Trench MOSFET
Rev. 2 — 13 June 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trenc |
NXP Semiconductors |
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| 4 | 2N7002BKS | dual N-channel Trench MOSFET 2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
Rev. 2 — 23 September 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFE |
NXP Semiconductors |
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