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Datasheet 2N7002A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N7002A | FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (RGS |
 KEC |
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| 3 | 2N7002A | N-CHANNEL ENHANCEMENT MODE FET WW .100Y.C M.TW WW .100Y.C M.TW WW 00Y.CO .TW WW 00Y.CO .TW W W W T .1 OM W.1 Y.C M. OM W O W C . 2N7002A W C W . SEMICONDUCTOR 0 Y W .TW W 0 0 Y W T . 1 0 M . .T 1 00 M . O 1 W M . O W N CHANNEL ENHANCEMENT MODE .C O W WW TW TECHNICAL . 00Y WW .100Y.C DATA .TW 1 WW .100Y.C M.TW M . FIELD EFFECT TRA |
KEC |
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| 2 | 2N7002A | N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002A
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V RDS(ON) max 6Ω @ VGS = 5V ID max TA = +25°C 200mA
Features and Benefits
N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small S |
 Diodes |
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| 1 | 2N7002AQ | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS 60V
RDS(ON) max 6Ω @ VGS = 5V
ID max
TA = +25°C 200mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
App |
Diodes |
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