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Datasheet 2N7000K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N7000K | N-Channel MOSFET ESD Protected 2000V Transistor N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
N-Channel MOSFET ESD Protected 2000V Transistor
Features
• ESD protected 2000V • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • RoHS |
 TAITRON |
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| 3 | 2N7000K | N Channel MOSFET SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Vol |
 KEC |
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| 2 | 2N7000K | N-Channel Enhancement Mode MOSFET 2N7000K
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
ESD rating: 1000V (HBM)
Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching Halogen free and RoHS compliant device
Applications
High |
 KODENSHI KOREA |
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| 1 | 2N7000KL | N-Channel 60-V (D-S) MOSFET 2N7000KL/BS170KL
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
60
rDS(on) (W)
2 @ VGS = 10 V 4 @ VGS = 4.5 V
VGS(th) (V)
1 0 to 2 1.0 2.5 5
ID (A)
0.47 0.33
D TrenchFETr Power MOSFET D ESD Protected: 2000 V
APPLICATIONS
D Direct |
 Vishay Siliconix |
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