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Datasheet 2N6583 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 2N6583   Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6583 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A ·Minimum Lot-to-Lot variati
Inchange Semiconductor
Inchange Semiconductor
datasheet 2N6583 pdf
1 2N6583   Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

2N6583 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma
Seme LAB
Seme LAB
datasheet 2N6583 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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