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Datasheet 2N6426 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2N6426 | Darlington Transistors(NPN Silicon)
2N6426, 2N6427
2N6426 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
http://onsemi.com
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current |
 ON Semiconductor |
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| 2 | 2N6426 | NPN Darlington Transistor 2N6426
Discrete POWER & Signal Technologies
2N6426
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO |
 Fairchild Semiconductor |
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| 1 | 2N6426 | (2N6426 / 2N6427) Darlington Transistors(NPN Silicon)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6426/D
Darlington Transistors
NPN Silicon
2N6426 * 2N6427
*Motorola Preferred Device
COLLECTOR 3 BASE 2
EMITTER 1
1
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – B |
 Motorola Semiconductors |
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