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Datasheet 2N6312 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2N6312 | SILICON TRANSISTORS 2N4231A 2N4232A 2N4233A NPN 2N6312 2N6313 2N6314 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed f |
 Central Semiconductor |
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| 5 | 2N6312 | Bipolar PNP Device 2N6312
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar PNP Device in a Hermetically sealed TO66
Metal Package.
Bipolar PNP Device. VCEO = 40V IC = 5A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 ( |
 Seme LAB |
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| 4 | 2N6312 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
 Boca Semiconductor Corporation |
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| 3 | 2N6312 | (2N6312 - 2N6314) Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications
PINNING PIN 1 2 3 Base Emi |
 SavantIC |
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