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Datasheet 2N6304 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 2N6304 | HIGH FREQUENCY TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (5 T"a = 25°C Derate above 25°C
Storage Temperature
Symbol VCEO VCBO VEBO
ic
pd
Tstg
Value 15 30
3.0 50 200 1.14
-65 to +200
Unit
Vdc
Vdc
Vdc
mAd |
Motorola Semiconductors |
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3 | 2N6304 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N6304
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min |
Microsemi Corporation |
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2 | 2N6304 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N6304
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min |
Advanced Power Technology |
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1 | 2N6304 | Trans GP BJT NPN 15V 0.05A 4-Pin TO-72 |
New Jersey Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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