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Datasheet 2N6298 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | 2N6298 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6298 2N6299 PNP 2N6300 2N6301 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for hig |
Central Semiconductor |
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7 | 2N6298 | PNP DARLINGTON POWER SILICON TRANSISTOR TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/540
Devices
2N6298
2N6299
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipati |
Microsemi |
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6 | 2N6298 | Silicon PNP Power Transistors SavantIC Semiconductor
Silicon PNP Power Transistors
DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6300/6301
APPLICATIONS ·General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 |
Savantic |
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5 | 2N6298 | Bipolar PNP Device 2N6298
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar PNP Device in a Hermetically sealed TO66
Metal Package.
Bipolar PNP Device. VCEO = 60V IC = 8A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 ( |
Seme LAB |
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Número de pieza | Descripción | Fabricantes | |
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