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Datasheet 2N6052 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | 2N6052 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base pro |
Central Semiconductor |
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10 | 2N6052 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
2N6052
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -100V(Min) ·Complement to type 2N6059
APP |
Inchange Semiconductor |
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9 | 2N6052 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductort PNP
Darlington Complementary Silicon Power Transistors
. . . designed for general−purpose amplifier and low frequency switching applications.
2N6052*
NPN
• High DC Current Gain — • • w
hFE = 3500 (Typ) @ IC = 5.0 Adc Collector−Emitter Sustaining |
ON Semiconductor |
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8 | 2N6052 | POWER TRANSISTORS(12A/150W) A
A
A
A
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Mospec Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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