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Datasheet 2N6042 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2N6042 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, de |
 Central Semiconductor |
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| 7 | 2N6042 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6045
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 Inchange Semiconductor |
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| 6 | 2N6042 | Bipolar Transistor Bipolar Transistor
Features:
• High DC Current Gain • Collector-Emitter Sustaining Voltage: V = 100V Min • Monolithic Construction with Built-in Base-Emitter Shunt Resistors
Absolute Maximum Ratings:
Parameters Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Co |
 Multicomp |
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| 5 | 2N6042 | COMPLEMENTARY SILICON POWER TRANSISTORS PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
Plastic Medium-Power Complementary Silicon Transistors
Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.
Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC |
 ON Semiconductor |
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