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Datasheet 2N6041 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | 2N6041 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, de |
Central Semiconductor |
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5 | 2N6041 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type 2N6044
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Inchange Semiconductor |
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4 | 2N6041 | COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6040/D
Plastic Medium-Power Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter |
ON Semiconductor |
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3 | 2N6041 | POWER TRANSISTORS(10A/80W) A
A
A
A
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Mospec Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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